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Effect of compression on the electronic, optical and transport properties of MoS2graphene-based junctions

last modified Aug 04, 2016 07:32 AM

Effect of compression on the electronic, optical and transport properties of MoS2graphene-based junctions

Mahdi Ghorbani-Asl, Paul D Bristowe, K Koziol, Thomas Heine and Agnieszka Kuc

29th April 2016

Abstract

Electronic, optical and transport properties of the MoS2/graphene heterostructure have been investigated as function of applied uniaxial compression normal to the interface plane using first principles calculations and a non-equilibrium Green's function approach. The results show that a small compressive load (~1 GPa) can open up the band gap (~12 meV), reduce the optical absorption coefficient (~7%), redshift the absorption spectrum, and create non-Ohmic I –V characteristics that depend on the magnitude of applied bias. This suggests that graphene/MoS2 heterostructure can be suitable for electromechanical and photomechanical devices where the electronic, optical and transport properties can be tuned by an appropriate application of bias and mechanical deformations.